IMPROVED TRANSISTOR DESIGN USED IN ADVANCED NANOMETER FLASH MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an improved transistor design technique used in advanced nanometer flash memory devices.SOLUTION: In a decoder used for a memory device, a plurality of reception blocks 700, 701-707 configured to receive from bit lines are composed of two types of transistors different in proximity effect and STI effect from each other. In each of PMOS and NMOS transistors, two types of transistors are used for a sense circuit, and thereby performance of an analog circuit is improved.SELECTED DRAWING: Figure 7