Indium phosphide single crystal wafer and method of manufacturing indium phosphide single crystal wafer

摘要

PROBLEM TO BE SOLVED: To improve the yield of an indium phosphide substrate for a radiation detection element containing zinc as an impurity.SOLUTION: An indium phosphide wafer 1 according to the invention has a p-type carrier concentration of 1×10cmto 1×10cm. When a portion 11 having a center aligned to the center of a principal plane and enclosed by a concentric circle having a radius shorter by 5 mm than that of the principal plane is divided into a plurality of regions and when the individual life time τ are measured, the life time τ are 45 μs within 90% or more of the whole area, and the relative standard deviation (σ/Ave.) of each life time τ is 12% or less.SELECTED DRAWING: Figure 1