Development of Techniques for Preparing High-Purity Single-Crystal Gallium Phosphide and Alloys of Gallium Phosphide and Indium Phosphide

摘要

The report describes the work accomplished on the development of techniques for preparing high-purity single crystal gallium phosphide and alloys of gallium phosphide and indium phosphide and covers the period from 15 July 1959 through 15 July 1961. It was found that the melting points and dissociation pressures of GaP and GaP-InP alloys are high (up to approximately 1510 C and 35 atmospheres, respectively). To crystallize the materials from stoichiometric melts, it is necessary to work simultaneously at elevated temperatures and pressures. Since temperature and pressure requirements for growth of crystals from solution are much less severe, the development of such methods is desirable. In the research, emphasis has been placed on development of methods for crystallizing GaP and GaP-InP alloys from metal rich solutions. (Author)