Junction barrier Schottky diode with improved surge current capability

摘要

A semiconductor power rectifier having increased surge current capability is described. The semiconductor power rectifier has a semiconductor layer (64) having a first main surface (52) and a second main surface (53) opposite to the first main surface (52). The semiconductor layer (64) includes a drift layer (55) having a first conductivity type, at least one pilot region (65) having a second conductivity type different from the first conductivity type, and a second conductivity type. And a transition region (57) having a second conductivity type, and at least one pilot region (65) is parallel to the first major surface (52). Each lateral direction has a width of at least 200 μm and is formed adjacent to the first major surface (52) so as to form a first pn junction with the drift layer (55), The emitter region (56) is formed adjacent to the first major surface (52) to form a second pn junction with the drift layer (55), and the transition region (57) is formed of the drift layer (55). To form a third pn junction with the first main It is formed adjacent to (52). At least one pilot region (65) is connected to the transition region (57) by a plurality of stripe-shaped emitter regions (56).