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Junction barrier schottky diode with enhanced surge current capability
Junction barrier schottky diode with enhanced surge current capability
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机译:具有增强的浪涌电流能力的结型势垒肖特基二极管
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摘要
A semiconductor power rectifier with increased surge current capability is described. A semiconductor layer includes a drift layer having a first conductivity type, at least one pilot region having a second conductivity type different from the first conductivity type, a plurality of stripe-shaped emitter regions having the second conductivity type, and a transition region having the second conductivity type, wherein the at least one pilot region has in any lateral direction parallel to the first main side a width of at least 200 μm and is formed adjacent to the first main side to form a first p-n junction with the drift layer, each emitter region is formed adjacent to the first main side form a second p-n junction with the drift layer, and the transition region is formed adjacent to the first main side to form a third p-n junction with the drift layer.
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