Bonding layer structure using alloy bonding material and method for forming the same, semiconductor device having the bonding layer structure, and method for manufacturing the same

摘要

The bonding layer structure of the present invention is a structure of a bonding layer formed by bonding the materials to be bonded A and B with an alloy bonding material, and the alloy bonding material is a Zn-Al eutectoid alloy, and In each of the bonding surfaces of the materials A and B to be bonded and the alloy bonding material, the bonding surface of the bonding material having the smaller area, or the bonding surface of the bonding materials having the same area. The dendritic arm spacing (DAS) of the Al-rich phase (α phase) contained in the bonding layer present in is more than 0.06 μm and less than 0.3 μm, while ensuring sufficient wettability, and A bonding layer structure using an alloy bonding material having high bonding strength at high temperature and capable of improving connection reliability by a stress relaxation effect, a method for forming the bonding layer structure, a semiconductor device having the bonding layer structure, and a method for manufacturing the semiconductor device.