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Methods of forming fin isolation regions under tensile-strained fins on FinFET semiconductor devices
Methods of forming fin isolation regions under tensile-strained fins on FinFET semiconductor devices
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机译:在FinFET半导体器件上的拉伸应变鳍下形成鳍隔离区的方法
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摘要
One illustrative method disclosed herein includes, among other things, forming a composite fin structure that is comprised of a first germanium-containing semiconductor material having a first concentration of germanium and a tensile-strained second semiconductor material (having a lesser germanium concentration) positioned on the first germanium-containing semiconductor material and performing a thermal anneal process to convert the first germanium-containing semiconductor material portion of the composite fin structure into a germanium-containing oxide isolation region positioned under the second semiconductor material that is a tensile-strained final fin for an NMOS FinFET device.
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