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Method for compensating for temperature effects in semiconductor device structures using a diode structure and a tunable resistor
Method for compensating for temperature effects in semiconductor device structures using a diode structure and a tunable resistor
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机译:使用二极管结构和可调电阻补偿半导体器件结构中温度影响的方法
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摘要
A method includes providing a semiconductor device structure including a substrate having a semiconductor-on-insulator (SOI) region and a hybrid region. A semiconductor device is provided in the SOI region. The semiconductor device includes a gate structure, a diode structure provided in the hybrid region and coupled to a substrate material of the SOI region, a supply circuit arrangement including first and second supply lines, a first resistor coupled between the first supply line and a first terminal of the diode structure, and a second resistor coupled between the second supply line and the substrate material positioned beneath the gate structure. At least one of the first and second resistors comprises a tunable resistor. A resistance of the tunable resistor is adjusted so as to adjust a threshold voltage (Vt) of the semiconductor device in dependence on an operating temperature of the SOI region.
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