Silicon carbide semiconductor base, method of crystal axis alignment in silicon carbide semiconductor base, and method of manufacturing silicon carbide semiconductor device

摘要

On a first epitaxial layer of a first conductivity type or a second conductivity type provided on a front surface of a silicon carbide substrate, a mark indicating a crystal axis direction of the silicon carbide substrate within a margin of error of one degree is provided. The mark is created on the silicon carbide substrate by forming the first epitaxial layer of the first conductivity type or the second conductivity type on the front surface of the silicon carbide substrate, detecting a stacking fault from the first epitaxial layer, and confirming the crystal axis direction of the silicon carbide substrate from the detected stacking fault.