HETEROJUNCTION BIPOLAR TRANSISTOR FULLY SELF-ALIGNED TO DIFFUSION REGION WITH STRONGLY MINIMIZED SUBSTRATE PARASITICS AND SELECTIVE PRE-STRUCTURED EPITAXIAL BASE LINK

摘要

Methods for manufacturing a bipolar junction transistor are provided. A method includes providing a semiconductor substrate having a trench isolation, where a pad resulting from a manufacturing of the trench isolation is arranged on the semiconductor substrate, providing an isolation layer on the semiconductor substrate and the pad such that the pad is covered by the isolation layer, removing the isolation layer up to the pad, and selectively removing the pad to obtain an emitter window.