Self-limited organic molecular beam epitaxy for precisely growing ultrathin C8-BTBT, PTCDA and their heterojunctions on surface

摘要

Disclosed is a method for depositing ultrathin C₈-BTBT, PTCDA and their heterojunctions with precise control of the molecular layers. In the method, source of the organic semiconductor material to grow (C₈-BTBT or PTCDA) and a support are spaced from each other in a vacuum chamber with a temperature gradient, and ultrathin organic semiconductor crystal can be deposited on the support in crystalline form and with precisely controlled molecular layers. The as-deposited C₈-BTBT or PTCDA crystals can be one-molecular-layer or two-molecular-layer in thickness and has full coverage on the support without any additional layers or voids. Ultrathin heterojunctions of these two-dimensional organic semiconductors can also be achieved.