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FULLY DEPLETED SILICON-ON-INSULATOR (FDSOI) TRANSISTOR DEVICE AND SELF-ALIGNED ACTIVE AREA IN FDSOI BULK EXPOSED REGIONS
FULLY DEPLETED SILICON-ON-INSULATOR (FDSOI) TRANSISTOR DEVICE AND SELF-ALIGNED ACTIVE AREA IN FDSOI BULK EXPOSED REGIONS
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机译:FDSOI散装暴露区域的绝缘硅耗尽(FDSOI)晶体管器件和自对准有源区
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摘要
Methods for eliminating the distance between a BULEX and SOI and the resulting devices are disclosed. Embodiments include providing a silicon layer on a BOX layer on a silicon substrate; forming two active areas in the silicon layer, separated by a space; forming first and second polysilicon gates over one active area, a third polysilicon gate over the space, and fourth and fifth polysilicon gates over the other active area, the second and fourth gates abutting edges of the space; forming spacers at opposite sides of each gate; removing the second, third, and fourth gates and the corresponding spacers; removing the silicon layer and BOX layer in the space, forming a trench and exposing the silicon substrate; forming second spacers on sidewalls of the trench; forming raised source/drain regions on each active area; and forming a p-well contact on the silicon substrate between the second spacers.
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