FABRICATION OF SILICON-GERMANIUM FIN STRUCTURE HAVING SILICON-RICH OUTER SURFACE

摘要

A method includes forming an oxide layer on a silicon-germanium (SiGe) fin formed on a substrate. The first oxide layer comprises a mixture of a germanium oxide compound (GeO_x) and a silicon oxide compound (SiO_x). The first oxide layer is modified to create a Si-rich outer surface of the SiGe fin. A silicon nitride layer is deposited on the modified first oxide layer.