FABRICATION OF SILICON-GERMANIUM FIN STRUCTURE HAVING SILICON-RICH OUTER SURFACE

摘要

A semiconductor structure includes a substrate and a silicon-germanium (SiGe) fin formed on the substrate. The SiGe fin has a first portion having a first doping profile and a second portion having a second doping profile. The first portion of the SiGe fin has a Si-rich outer surface.