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Systems and Methods for the Synthesis of High Thermoelectric Performance Doped-SnTe Materials

机译:合成高热电性能掺杂SnTe材料的系统和方法

摘要

A thermoelectric composition comprising tin (Sn), tellurium (Te) and at least one dopant that comprises a peak dimensionless figure of merit (ZT) of 1.1 and a Seebeck coefficient of at least 50 μV/K and a method of manufacturing the thermoelectric composition. A plurality of components are disposed in a ball-milling vessel, wherein the plurality of components comprise tin (Sn), tellurium (Te), and at least one dopant such as indium (In). The components are subsequently mechanically and thermally processed, for example, by hot-pressing. In response to the mechanical-thermally processing, a thermoelectric composition is formed, wherein the thermoelectric composition comprises a dimensionless figure of merit (ZT) of the thermoelectric composition is at least 0.8, and wherein a Seebeck coefficient of the thermoelectric composition is at least 50 μV/K at any temperature.
机译:一种包含锡(Sn),碲(Te)和至少一种掺杂剂的热电组合物,该热电组合物的峰值无因次品质因数(ZT)为1.1,塞贝克系数至少为50μV/ K 。多个成分设置在球磨容器中,其中多个成分包括锡(Sn),碲(Te)和至少一种掺杂剂,例如铟(In)。随后例如通过热压对部件进行机械和热处理。响应于机械热处理,形成热电组合物,其中热电组合物包括热电组合物的无量纲品质因数(ZT)为至少0.8,并且其中热电组合物的塞贝克系数为至少50。在任何温度下为μV/ K。

著录项

  • 公开/公告号US2018159012A1

    专利类型

  • 公开/公告日2018-06-07

    原文格式PDF

  • 申请/专利权人 UNIVERSITY OF HOUSTON SYSTEM;

    申请/专利号US201815869329

  • 发明设计人 ZHIFENG REN;QIAN ZHANG;GANG CHEN;

    申请日2018-01-12

  • 分类号H01L35/16;H01L35/34;

  • 国家 US

  • 入库时间 2022-08-21 13:00:42

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