首页> 外国专利> SEMICONDUCTOR DIE ASSEMBLIES HAVING MOLDED UNDERFILL STRUCTURES AND RELATED TECHNOLOGY

SEMICONDUCTOR DIE ASSEMBLIES HAVING MOLDED UNDERFILL STRUCTURES AND RELATED TECHNOLOGY

机译:具有模底结构和相关技术的半导体模具组件

摘要

A semiconductor die assembly in accordance with an embodiment of the present technology includes first and second semiconductor dies and a package substrate carrying the first and second semiconductor dies. The second semiconductor die includes a first peripheral portion extending laterally outward beyond a first edge surface of the first semiconductor die. Similarly, the package substrate includes a second peripheral portion extending laterally outward beyond a second edge surface of the second semiconductor die. The semiconductor die assembly further includes a first volume of molded underfill material between the first and second semiconductor dies, a second volume of molded underfill material between the package substrate and the second semiconductor die, a first molded peripheral structure laterally adjacent to the first edge surface of the first semiconductor die, and a second molded peripheral structure laterally adjacent to the second edge surface of the second semiconductor die.
机译:根据本技术的实施例的半导体管芯组件包括第一和第二半导体管芯以及承载第一和第二半导体管芯的封装基板。第二半导体管芯包括横向延伸超过第一半导体管芯的第一边缘表面的第一外围部分。类似地,封装基板包括第二外围部分,该第二外围部分横向向外延伸超过第二半导体管芯的第二边缘表面。半导体管芯组件还包括在第一半导体管芯和第二半导体管芯之间的第一体积的模制底部填充材料,在封装基板和第二半导体管芯之间的第二体积的模制底部填充材料,横向于第一边缘表面侧向的第一模制外围结构。所述第一半导体管芯的第二边缘和第二模制外围结构在横向上邻近所述第二半导体管芯的第二边缘表面。

著录项

  • 公开/公告号US2018130773A1

    专利类型

  • 公开/公告日2018-05-10

    原文格式PDF

  • 申请/专利权人 MICRON TECHNOLOGY INC.;

    申请/专利号US201615345973

  • 发明设计人 BRADLEY R. BITZ;XIAO LI;

    申请日2016-11-08

  • 分类号H01L25/065;H01L23/31;H01L25;H01L21/56;H01L21/48;

  • 国家 US

  • 入库时间 2022-08-21 13:00:24

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