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TECHNOLOGIES FOR SELECTIVELY ETCHING OXIDE AND NITRIDE MATERIALS AND PRODUCTS FORMED USING THE SAME
TECHNOLOGIES FOR SELECTIVELY ETCHING OXIDE AND NITRIDE MATERIALS AND PRODUCTS FORMED USING THE SAME
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机译:选择性蚀刻氧化物和氮化物的技术以及使用该技术制成的产品
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摘要
Technologies for selectively etching oxide and nitride materials on a work piece are described. Such technologies include methods for etching a work piece with a remote plasma that is produced by igniting a plasma gas flow. By controlling the flow rate of various components of the plasma gas flow, plasmas exhibiting desired etching characteristics may be obtained. Such plasmas may be used in single or multistep etching operations, such as recess etching operations that may be used in the production of non-planar microelectronic devices.
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