首页> 外国专利> FABRICATION OF NANOSTRUCTURED SUBSTRATES COMPRISING A PLURALITY OF NANOSTRUCTURE GRADIENTS ON A SINGLE SUBSTRATE

FABRICATION OF NANOSTRUCTURED SUBSTRATES COMPRISING A PLURALITY OF NANOSTRUCTURE GRADIENTS ON A SINGLE SUBSTRATE

机译:包含单个衬底上的多个纳米结构梯度的纳米结构基体的制造

摘要

The invention relates to a method for producing a nanostructured substrate comprising an array of protruding nanostructures, which method comprises at least the following steps: a) providing a primary substrate; b) depositing at least one layer of a material capable to be removed by means of reactive ion etching (RIE) onto said primary substrate which layer comprises a predetermined gradient of its thickness; c) depositing a nanostructured etching mask onto the graded layer deposited in step b); d) generating protruding structures, in particular nanopillars, in the graded layer deposited in step b) by means of reactive ion etching (RIE), wherein simultaneously at least 2, preferably 3, predetermined continuous gradients of geometric parameters of the protruding structures are generated on the same substrate—More specifically, the geometric parameters are selected from the group comprising the height, diameter and spacing—of the protruding nanostructures. A further aspect of the invention relates to a nanostructured substrate comprising an array of protruding nanostructures obtainable by the method as outlined above. In a preferred embodiment of said nanostructured substrate, each of the protruding nanostructures simultaneously represents an element of 3 continuous gradients of the height, diameter and spacing of said protruding nanostructures.
机译:本发明涉及一种用于生产包括凸出的纳米结构的阵列的纳米结构基底的方法,该方法至少包括以下步骤:a)提供初级基底; b)在所述主基板上沉积至少一层能够通过反应离子蚀刻(RIE)去除的材料,该层包括其厚度的预定梯度; c)在步骤b)中沉积的渐变层上沉积纳米结构蚀刻掩模; d)通过反应离子蚀刻(RIE)在步骤b)中沉积的梯度层中产生突出结构,特别是纳米柱,其中同时产生至少2个,优选3个预定连续梯度的几何结构的几何参数在同一基板上-更具体地说,几何参数选自突出的纳米结构的高度,直径和间距。本发明的另一方面涉及一种纳米结构基底,其包括通过如上所述的方法可获得的一系列突出的纳米结构。在所述纳米结构基底的优选实施方案中,每个突出的纳米结构同时表示所述突出的纳米结构的高度,直径和间距的3个连续梯度的元素。

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