Single or mutli block mask management for spacer height and defect reduction for BEOL

摘要

Aspects of the disclosure include method of making semiconductor structures. Aspects include providing a semiconductor structure including a plurality of spacer, an organic planarization layer, and a SiARC layer. Aspects also include forming an inverted mask on the semiconductor structure, the inverted mask including an inverted mask opening above a portion of the plurality of spacers and a portion of the TiN layer. Aspects also include eroding the portion of the plurality of spacers below the inverted mask opening. Aspects also include depositing a fill material masking the portion of the plurality of spacers below the inverted mask opening and the portion of the TiN layer below the inverted mask opening to generate a masked TiN layer segment and an unmasked TiN layer segment and removing a portion of the unmasked TiN layer segment.