METHOD FOR FORMING NON-VOLATILE MEMORY CELL, NON-VOLATILE MEMORY CELL FORMED ACCORDING TO SAID METHOD AND MICROELECTRONIC DEVICE COMPRISING SUCH MEMORY CELLS

摘要

A method for forming a non-volatile memory cell intended to switch the memory cell from an unformed state to a formed state, the memory cell including an ordered stack of a lower electrode, a layer of insulating material and an upper electrode. The forming method includes a breakdown operation in which at least one laser shot is emitted towards the layer of insulating material to make the layer of insulating material active by making it pass from a high resistance state to a low resistance state, the memory cell being formed when the layer of insulating material is active.