首页> 外国专利> PULSE OPERATING METHOD FOR FET-TYPE SENSOR HAVING HORIZONTAL FLOATING GATE

PULSE OPERATING METHOD FOR FET-TYPE SENSOR HAVING HORIZONTAL FLOATING GATE

机译:具有水平浮栅的FET型传感器的脉冲操作方法

摘要

“Provided is a pulse operating method for an FET-type sensor having a horizontal floating electrode. The pulse operating method for an FET-type sensor includes a reading preparation step of applying one or more pre-bias voltage pulses (Vpre) to the control electrode and a reading step of applying one or more read-bias voltage pulses (VrCG) to the control electrode and applying a voltage pulse (VrDs) synchronized with the read-bias voltage pulse between a drain and a source. The reactivity and the recovery time can be improved according to the width or the magnitude of the pre-bias voltage pulse applied to the input terminal of the control electrode, and the oxidizing gas and the reducing gas can be distinguished. In addition, since current flows to the FET-type sensor only in the read-biasing period, power consumption can be greatly reduced.”
机译:“提供了一种用于具有水平浮动电极的FET型传感器的脉冲操作方法。用于FET型传感器的脉冲操作方法包括向控制电极施加一个或多个预偏置电压脉冲(V pre )的读取准备步骤和施加一个或多个读取的读取步骤将偏置电压脉冲(V rCG )施加到控制电极,并在漏极和源极之间施加与读取偏置电压脉冲同步的电压脉冲(V rDs )。根据施加到控制电极的输入端子上的预偏置电压脉冲的宽度或大小,可以提高反应性和恢复时间,并且可以区分氧化气体和还原气体。另外,由于电流仅在读取偏置期间流向FET型传感器,因此可以大大降低功耗。”

著录项

  • 公开/公告号US2017350852A1

    专利类型

  • 公开/公告日2017-12-07

    原文格式PDF

  • 申请/专利权人 SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION;

    申请/专利号US201715612384

  • 发明设计人 JONG-HO LEE;JONGMIN SHIN;

    申请日2017-06-02

  • 分类号G01N27/414;G01N27/16;G01N27/00;

  • 国家 US

  • 入库时间 2022-08-21 12:58:24

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