首页> 外国专利> CONTROLLER-BASED MEMORY SCRUB FOR DRAMS WITH INTERNAL ERROR-CORRECTING CODE (ECC) BITS CONTEMPORANEOUSLY DURING AUTO REFRESH OR BY USING MASKED WRITE COMMANDS

CONTROLLER-BASED MEMORY SCRUB FOR DRAMS WITH INTERNAL ERROR-CORRECTING CODE (ECC) BITS CONTEMPORANEOUSLY DURING AUTO REFRESH OR BY USING MASKED WRITE COMMANDS

机译:自动刷新或使用屏蔽写命令的同时具有内部错误校正码(ECC)位的DRAM的基于控制器的内存擦除

摘要

A method for updating a DRAM memory array is disclosed. The method comprises: a) transitioning the DRAM memory array from an idle state to a refresh state in accordance with a command from a memory controller; b) initiating a refresh on the DRAM memory array using DRAM internal control circuitry by activating a row of data into an associated sense amplifier buffer; and c) during the refresh, performing an ERR Correction Code (ECC) scrub operation of selected bits in the activated row of the DRAM memory array.
机译:公开了一种用于更新DRAM存储器阵列的方法。该方法包括:a)根据来自存储器控制器的命令,将DRAM存储器阵列从空闲状态转变为刷新状态;以及b)通过将一行数据激活到相关的读出放大器缓冲器中来使用DRAM内部控制电路在DRAM存储器阵列上启动刷新; c)在刷新期间,对DRAM存储器阵列的激活行中的选定位执行ERR校正代码(ECC)清理操作。

著录项

  • 公开/公告号US2018314591A1

    专利类型

  • 公开/公告日2018-11-01

    原文格式PDF

  • 申请/专利权人 NVIDIA CORPORATION;

    申请/专利号US201816026954

  • 发明设计人 DAVID REED;ALOK GUPTA;

    申请日2018-07-03

  • 分类号G06F11/10;G06F3/06;G11C7/02;

  • 国家 US

  • 入库时间 2022-08-21 12:58:22

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