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Write Amplification due to ECC on Flash Memory or Leave those Bit Errors Alone

机译：由闪存上的ECC写入放大或单独保留这些位错误

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Sangwhan Moon; A. L. Narasimha Reddy;
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1. SALE: Smartly Allocating Low-Cost Many-Bit ECC for Mitigating Read and Write Errors in STT-RAM Caches [J] . Qureshi Muhammad Avais, Park Jungwoo, Kim Soontae IEEE transactions on very large scale integration (VLSI) systems . 2020,第6期

机译：销售：巧妙地分配低成本的数位ECC，用于缓解STT-RAM缓存中的读写错误
2. Non-volatile Random Access Memory and NAND Flash Memory Integrated Solid-State Drives with Adaptive Codeword Error Correcting Code for 3.6 Times Acceptable Raw Bit Error Rate Enhancement and 97% Power Reduction [J] . Mayumi Fukuda, Kazuhide Higuchi, Ken Takeuchi Japanese journal of applied physics . 2011,第4ISSUE2期

机译：带有自适应码字纠错码的非易失性随机存取存储器和NAND闪存集成固态驱动器，可将原始误码率提高3.6倍，功耗降低97％
3. Bit interleaved coded modulation to enable fractional bits-per-cell storage at NAND flash memory [J] . Kaynak Mustafa N., Khayat Patrick R., Parthasarathy Sivagnanam AEU: Archiv fur Elektronik und Ubertragungstechnik: Electronic and Communication . 2016,第5期

机译：位交错编码调制，可将每单元小数位存储在NAND闪存中
4. Write amplification due to ECC on flash memory or leave those bit errors alone [C] . Moon Sangwhan, Reddy A. L. Narasimha Mass Storage Systems and Technologies (MSST), 2012 IEEE 28th Symposium on . 2012

机译：由于闪存上的ECC导致的写入放大或将那些位错误保留下来
5. Storage Channels with Write Errors: Two-dimensional Magnetic Recording and Advanced Memory Stystems. [D] . Hwang, Euiseok. 2011

机译：具有写入错误的存储通道：二维磁记录和高级存储系统。
6. Long-term memory for the terrorist attack of September 11: Flashbulb memories event memories and the factors that influence their retention [O] . William Hirst, Elizabeth A. Phelps, Randy L. Buckner, -1

机译：9月11日的恐怖袭击事件的长期记忆：Flashbulb MemoriesEvent Memories以及影响其保留的因素
7. Graded Bit-Error-Correcting Codes With Applications to Flash Memory [O] . Ryan Gabrys, Eitan Yaakobi, Lara Dolecek 2014

机译：具有闪存存储器应用的分级误码校正码

Write Amplification due to ECC on Flash Memory or Leave those Bit Errors Alone

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