LOW RESISTANCE DUAL LINER CONTACTS FOR FIN FIELD-EFFECT TRANSISTORS (FinFETs)

摘要

A semiconductor device includes first and second gate structures on a substrate respectively corresponding to an n-type and a p-type transistor, a first source/drain on the substrate corresponding to the n-type transistor, a second source/drain on the substrate corresponding to the p-type transistor, a first contact trench over the first source/drain and adjacent the first gate structure, a second contact trench over the second source/drain and adjacent the second gate structure, a first liner layer in the first trench positioned at a bottom part of the first trench, a second liner layer in the second trench and on the first liner layer in the first trench, a metallization layer in the first and second trenches on the second liner layer, and a first silicide contact between the first liner layer and the first source/drain and a second silicide contact between the second liner layer and the second source/drain.