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Method of Forming a Single Metal that Performs N Work Function and P Work Function in a High-K/Metal Gate Process
Method of Forming a Single Metal that Performs N Work Function and P Work Function in a High-K/Metal Gate Process
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机译:形成在高K /金属栅极工艺中执行N功和P功的单一金属的方法
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摘要
A semiconductor device includes a semiconductor substrate, an isolation structure in the semiconductor substrate for isolating a first active region and a second active region, a first device formed in the first active region, and a second device formed in the second active region. The first device has a first gate dielectric layer and a first gate electrode over the first gate dielectric layer. The first gate electrode includes at least one of Ta and C, and has a first work function for a first conductivity. The second device has a second gate dielectric layer and a second gate electrode over the second gate dielectric layer. The second gate electrode includes at least one of Ta, C, and Al, and has a second work function for a second conductivity. The second conductivity is different from the first conductivity.
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