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Method of forming a single metal that performs N work function and P work function in a high-k/metal gate process
Method of forming a single metal that performs N work function and P work function in a high-k/metal gate process
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机译:形成在高k /金属栅极工艺中执行N功和P功的单一金属的方法
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摘要
The present disclosure describes a semiconductor device. The device includes a semiconductor substrate, an isolation structure formed in the substrate for isolating a first active region and a second active region, a first transistor formed in the first active region, the first transistor having a high-k gate dielectric layer and a metal gate with a first work function formed over the high-k gate dielectric layer, and a second transistor formed in the second active region, the second transistor having the high-k gate dielectric layer and a metal gate with a second work function formed over the high-k gate dielectric layer. The metal gates are formed from at least a single metal layer having the first work function and the second work function.
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