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Selectively deposited spacer film for metal gate sidewall protection
Selectively deposited spacer film for metal gate sidewall protection
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机译:选择性沉积的隔离膜,用于金属栅侧壁保护
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摘要
A method of fabricating a fin field-effect transistor (FinFET) device is provided. The method includes forming a carbon-based layer on a plurality of gate structures formed on a semiconductor substrate. Each gate structure overlies at least one fin formed on the semiconductor substrate. The carbon-based layer covers sidewalls of the gate structures. A metal silicide layer overlies the carbon-based layer. The metal silicide layer and carbon-based layer are removed, and a metal layer is formed between adjacent gate structures.
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