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Method to reduce resistance for a copper (CU) interconnect landing on multilayered metal contacts, and semiconductor structures formed therefrom
Method to reduce resistance for a copper (CU) interconnect landing on multilayered metal contacts, and semiconductor structures formed therefrom
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机译:减少用于降落在多层金属触点上的铜(CU)互连线的电阻的方法以及由此形成的半导体结构
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摘要
A method of forming a semiconductor structure includes forming a first insulating layer containing a first metal layer embedded therein and on a surface of a semiconductor substrate. The method further includes forming an inter-layer dielectric (ILD) layer on the first insulating layer, and forming at least one via trench structure including a first metallization trench and a via in the ILD layer. In addition, the method also includes depositing a metal material to form a first metallization layer in the first metallization trench, a via contact in the via, and a second metal layer on top of at least a portion of the first metal layer in the opening of the first insulating layer. The first metal layer and the second metal layer constitute a multilayer metal contact located in the opening of the first insulating layer.
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