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Method of fabricating a charge-trapping gate stack using a CMOS process flow
Method of fabricating a charge-trapping gate stack using a CMOS process flow
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机译:使用CMOS工艺流程制造电荷俘获栅叠层的方法
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摘要
A method of fabricating a memory device is described. Generally, the method includes forming a channel from a semiconducting material overlying a surface of a substrate, and forming dielectric stack on the channel. A first cap layer is formed over the dielectric stack, and a second cap layer including a nitride formed over the first cap layer. The first and second cap layers and the dielectric stack are then patterned to form a gate stack of a device. The second cap layer is removed and an oxidation process performed to form a blocking oxide over the dielectric stack, wherein the oxidation process consumes the first cap layer. Other embodiments are also described.
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