DEPOSITION OF THERMOOXIDATIVE STABLE SILICON CARBIDE (SIC) LAYER ON CARBON AND GRAPHITE SUBSTRATES

摘要

The present invention relates to a process for generating thermooxidative stable silicon carbide (SiC) layer on carbon and graphite substrates. The silicon carbide (SiC) layering was achieved by thermolysis of polymerized silanes, generated by exposing the coated cycloorganosilanes under high energy UV rays or heating nearly 200oC followed by thermolysis. The silicon carbide (SiC) layered graphite or carbon has very high thermal stability and can be used for components for propulsion, hypersonic plane, brake disc, clutch disc etc.