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Nonvolatile Latch Circuit And Logic Circuit, And Semiconductor Device Using The Same
Nonvolatile Latch Circuit And Logic Circuit, And Semiconductor Device Using The Same
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机译:非易失性锁存电路和逻辑电路,以及使用其的半导体器件
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摘要
To provide a novel nonvolatile latch circuit (400) and a semiconductor device using the nonvolatile latch circuit (400), a nonvolatile latch circuit (400) includes a latch portion (411) having a loop structure where an output of a first element (412) is electrically connected to an input of a second element (413), and an output of the second element (413) is electrically connected to an input of the first element (412); and a data holding portion (401) for holding data of the latch portion (411). In the data holding portion (401), a transistor (402) using an oxide semiconductor as a semiconductor material for forming a channel formation region is used as a switching element. In addition, an inverter (403) electrically connected to a source electrode or a drain electrode of the transistor (402) is included. With the transistor (402), data held in the latch portion (411) can be written into a gate capacitor of the inverter (403) or a capacitor (404) which is separately provided. FIGS. 1A & 1B
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