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Nonvolatile Latch Circuit And Logic Circuit, And Semiconductor Device Using The Same

机译:非易失性锁存电路和逻辑电路,以及使用其的半导体器件

摘要

To provide a novel nonvolatile latch circuit (400) and a semiconductor device using the nonvolatile latch circuit (400), a nonvolatile latch circuit (400) includes a latch portion (411) having a loop structure where an output of a first element (412) is electrically connected to an input of a second element (413), and an output of the second element (413) is electrically connected to an input of the first element (412); and a data holding portion (401) for holding data of the latch portion (411). In the data holding portion (401), a transistor (402) using an oxide semiconductor as a semiconductor material for forming a channel formation region is used as a switching element. In addition, an inverter (403) electrically connected to a source electrode or a drain electrode of the transistor (402) is included. With the transistor (402), data held in the latch portion (411) can be written into a gate capacitor of the inverter (403) or a capacitor (404) which is separately provided. FIGS. 1A & 1B
机译:为了提供新颖的非易失性闩锁电路(400)和使用该非易失性闩锁电路(400)的半导体器件,非易失性闩锁电路(400)包括具有环路结构的闩锁部分(411),其中第一元件(412)的输出)电连接到第二元件(413)的输入,并且第二元件(413)的输出电连接到第一元件(412)的输入;数据保持部分(401),用于保持锁存部分(411)的数据。在数据保持部分(401)中,使用氧化物半导体作为用于形成沟道形成区域的半导体材料的晶体管(402)用作开关元件。另外,包括电连接到晶体管(402)的源电极或漏电极的反相器(403)。利用晶体管(402),可以将保持在锁存部分(411)中的数据写入反相器(403)的栅极电容器或单独设置的电容器(404)中。无花果1A和1B

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