TECHNIQUES FOR FORMING III-N SEMICONDUCTOR DEVICES WITH INTEGRATED DIAMOND HEAT SPREADER

摘要

Techniques are disclosed for forming III-N semiconductor devices including integrated diamond heat spreader structures. In accordance with some embodiments, through-hole features may be formed in a silicon (Si) or other semiconductor substrate under a back side of a power amplifier device and filled, in part or in whole, with diamond material. In accordance with other embodiments, one or more layers of diamond material may be formed over a front side of a power amplifier device. The presence of diamond layers or structures (or both) may serve to facilitate heat dissipation for the host architecture, in accordance with some embodiments. The disclosed techniques may be used, for example, in fabricating high-power-density gallium nitride (GaN)-based radio frequency (RF) power amplifiers having integrated diamond heat spreaders configured to provide efficient heat extraction and thermal conductivity from the front and/or back side thereof. The improved heat extraction performance may lead to improved device reliability.