METHOD FOR MANUFACTURING CAPACITOR, METHOD FOR MANUFACTURING SUBSTRATE WITH BUILT-IN CAPACITOR, SUBSTRATE WITH BUILT-IN CAPACITOR, AND SEMICONDUCTOR DEVICE MOUNTING COMPONENT

摘要

Provided are: a step (1) for forming a first electrode 3A; a step (2) for forming a high dielectric thin film 5 on the first electrode 3A; a step (3) in which a solder-containing resin composition 6 that contains a resin component and a melting temperature transition-type solder is provided on the high dielectric thin film 5, degassing is performed, and the resin is filled into pinholes in the high dielectric thin film 5; a step (4) in which the melting temperature transition-type solder 6 is allowed to settle and a melting temperature transition-type solder layer 7 is formed on the high dielectric thin film 5; a step (5) for melting the melting temperature transition-type solder layer 7, and prompting the formation of an alloy to yield a conductor layer 8 for which the re-melting temperature is MP; a step (6) in which the resin component is hardened at a temperature lower than the melting temperature MP of the conductor layer 8 to make a resin hardened layer 9; and a step (7) for forming a through hole in the resin hardened layer 9 and exposing the conductor layer, and also forming a second electrode connected to the conductor layer.