Semiconductor micro-hollow cathode discharge device for plasma jet generation

摘要

#$%^&*AU2017200939A120171116.pdf#####SEMICONDUCTOR MICRO-HOLLOW CATHODE DISCHARGE DEVICE FOR PLASMA JET GENERATION ABSTRACT A micro-hollow cathode discharge device (100). The device (100) includes a first electrode layer (102) comprising a first electrode. A hole (110) is disposed in the first electrode layer (102). The device (100) also includes a dielectric layer (104) having a first surface that is disposed on the first electrode layer (102). The hole (110) continues from the first electrode layer (102) through the dielectric layer (104). The device also includes a semi-conducting layer (106) disposed on a second surface of the dielectric layer (104) opposite the first surface. The semi-conducting layer (106) is a semiconductor material that spans across the hole (110) such that the hole (110) terminates at the semi-conducting layer (106). The device also includes a second electrode layer (108) disposed on the semi-conducting layer (106) opposite the dielectric layer (104).1/8 100 116 102 102 114 104 104 112 106 110 108 FIG. 1 200 102 104 202 110 204 FIG. 2 108 106 304 300 314 312 310 320 306 | COMPUTER F .308 CAMERA 318 FIG. 3