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Semiconductor micro-hollow cathode discharge device for plasma jet generation

摘要

A micro-hollow cathode discharge device. The device includes a first electrode layer comprising a first electrode. A hole is disposed in the first electrode layer. The device also includes a dielectric layer having a first surface that is disposed on the first electrode layer. The hole continues from the first electrode layer through the dielectric layer. The device also includes a semi-conducting layer disposed on a second surface of the dielectric layer opposite the first surface. The semi-conducting layer is a semiconductor material that spans across the hole such that the hole terminates at the semi-conducting layer. The device also includes a second electrode layer disposed on the semi-conducting layer opposite the dielectric layer.

著录项

  • 公开/公告号US10711770B2

    专利类型

  • 公开/公告日2020.07.14

    原文格式PDF

  • 申请/专利权人

    申请/专利号US15494669

  • 发明设计人 Dejan Nikic;

    申请日2017.04.24

  • 分类号

  • 国家 US

  • 入库时间 2022-08-21 10:59:25

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