MICROELECTRONIC DEVICES AND METHODS FOR ENHANCING INTERCONNECT RELIABILITY PERFORMANCE USING AN IN-SITU NICKEL BARRIER LAYER

摘要

Embodiments of the invention include a microelectronic device that includes a layer dielectric material that includes a feature with a depression. A Nickel barrier layer is formed in the depression of the feature and a first conductive layer is formed in the depression of the feature. The microelectronic device can optionally include a second conductive layer formed below the depression of the feature.