首页> 外国专利> METHOD FOR PRODUCING POROUS NANOSTRUCTURE, THREE-DIMENSIONAL ELECTRODE AND SENSOR HAVING POROUS NANOSTRUCTURE PRODUCED THEREBY, AND APPARATUS FOR PRODUCING POROUS NANOSTRUCTURE

METHOD FOR PRODUCING POROUS NANOSTRUCTURE, THREE-DIMENSIONAL ELECTRODE AND SENSOR HAVING POROUS NANOSTRUCTURE PRODUCED THEREBY, AND APPARATUS FOR PRODUCING POROUS NANOSTRUCTURE

机译:产生多孔纳米结构的方法,具有由此产生的多孔纳米结构的三维电极和传感器以及制造多孔纳米结构的装置

摘要

The present invention relates to a method for producing a porous nanostructure. More specifically, the method for producing the porous nanostructure comprises the following steps: a preparation step for preparing a conductive substrate; a foam formation step for conducting an electrochemical deposition process on the conductive substrate with the supply of an electrolyte, so as to form, on the conductive substrate, a porous metal structure by bubbles formed during the electrochemical deposition process; and a coating step for conducting the electrochemical deposition process with the supply of the electrode onto the metal structure so as to form a first nanostructure on the metal structure.;COPYRIGHT KIPO 2017
机译:本发明涉及一种制备多孔纳米结构的方法。更具体地,用于制备多孔纳米结构的方法包括以下步骤:用于制备导电基板的制备步骤;以及用于制备导电性基材的制备步骤。泡沫形成步骤,用于在电解质的供应下在导电基底上进行电化学沉积过程,从而通过在电化学沉积过程中形成的气泡在导电基底上形成多孔金属结构;以及在电极上供应电极到金属结构上以进行电化学沉积工艺以在金属结构上形成第一纳米结构的涂覆步骤。; COPYRIGHT KIPO 2017

著录项

  • 公开/公告号KR20170130216A

    专利类型

  • 公开/公告日2017-11-28

    原文格式PDF

  • 申请/专利权人 QBIOSENS INC.;

    申请/专利号KR20160061016

  • 发明设计人 YANG SUNGKR;HONG SUNG AKR;KWON HEE JUNGKR;

    申请日2016-05-18

  • 分类号B82B3;B82Y15;B82Y30;B82Y40;

  • 国家 KR

  • 入库时间 2022-08-21 12:41:56

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