SUSCEPTOR PROCESSING METHOD AND PLATE FOR PROCESSING SUSCEPTOR

摘要

In the susceptor treatment method according to the present embodiment, a plate is placed on a susceptor provided in a deposition chamber, and a main heater disposed below the susceptor and an auxiliary heater provided on an upper portion of the deposition chamber are used, The SiC film formed on the surface of the susceptor is sublimated and attached to the plate, and the plate to which SiC is adhered is taken out from the film forming chamber.