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NUMERICAL SIMULATION OF THE EFFECTS OF DIFFERENT COATINGS ON GRAPHITE SUSCEPTOR FOR THE INDUCTION PROCESS OF POLYCRYSTALLINE SILICON

机译：不同涂层对多晶硅诱导过程中石墨敏感剂影响的数值模拟

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K. L. Lian; S. S. Lian; S. Tsao;
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1. NUMERICAL SIMULATION OF THE EFFECTS OF DIFFERENT COATINGS ON GRAPHITE SUSCEPTOR FOR THE INDUCTION PROCESS OF POLYCRYSTALLINE SILICON [J] . K. L. Lian, S. S. Lian, S. Tsao Materials science forum . 2012,第PTa2期

机译：石墨硅诱导过程中不同涂层对石墨表面活性剂影响的数值模拟
2. NUMERICAL SIMULATION OF HEAT TRANSFER IN DIRECTIONAL SOLIDIFICATION PROCESS FOR POLYCRYSTALLINE SILICON [J] . Guoqiang Lv, Wenhui Ma, Hua Wang, Environmental engineering and management journal . 2011,第6期

机译：多晶硅定向凝固过程中传热的数值模拟
3. Numerical Simulation of Parasitic Resistance Effects in Polycrystalline Silicon TFTs [J] . P. Gaucci, A. Valletta, L. Mariucci, IEEE Transactions on Electron Devices . 2006,第3期

机译：多晶硅TFT寄生电阻效应的数值模拟
4. NUMERICAL SIMULATION OF THE EFFECTS OF DIFFERENT COATINGS ON GRAPHITE SUSCEPTOR FOR THE INDUCTION PROCESS OF POLYCRYSTALLINE SILICON [C] . K. L. Lian, S. S. Lian, S. Tsao International conference on physical and numerical simulation of material processing;ICPNS2010 . 2012

机译：石墨硅诱导过程中不同涂层对石墨表面活性剂影响的数值模拟
5. Analytical and experimental studies on microwave assisted CVD diamond coatings on silicon nitride and cemented tungsten carbide tools and growth of polycrystalline diamond on several transition metals [D] . Kamarajugadda, Mallika 1998

机译：氮化硅和硬质碳化钨工具上的微波辅助CVD金刚石涂层的分析和实验研究以及几种过渡金属上多晶金刚石的生长
6. Dynamic recrystallization during deformation of polycrystalline ice: insights from numerical simulations [O] . Maria-Gema Llorens, Albert Griera, Florian Steinbach, -1

机译：多晶冰变形过程中的动态再结晶：数值模拟的启示
7. AFTech scales up pyrolytic graphite coating capability for susceptors and other engineering parts [O] . 1995

机译：AFTech扩大了基座和其他工程零件的热解石墨涂层能力
8. Effects of spatial location of defect states on the switching characteristics of amorphous and polycrystalline silicon thin film transistors: A numerical simulation using AMPS 2-D [R] . Smith, J. , Fonash, S. , Kalkan, A. 1994

机译：缺陷态空间位置对非晶硅和多晶硅薄膜晶体管开关特性的影响：amps 2-D的数值模拟

NUMERICAL SIMULATION OF THE EFFECTS OF DIFFERENT COATINGS ON GRAPHITE SUSCEPTOR FOR THE INDUCTION PROCESS OF POLYCRYSTALLINE SILICON

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