首页> 外国专利> p-type P-TYPE SEMICONDUCTOR LAYER STRUCTURE AND UV LIGHT-EMITTING DEVICE INCLUDING THE SAME

p-type P-TYPE SEMICONDUCTOR LAYER STRUCTURE AND UV LIGHT-EMITTING DEVICE INCLUDING THE SAME

机译:p型P型半导体层结构和包括该结构的UV发光器件

摘要

A p-type semiconductor layer structure includes a p-type semiconductor layer, an electrode structure including metal patterns which are formed on the p-type semiconductor layer and cross each other and ohmic contact patterns which are interposed between the metal patterns and the p-type semiconductor layer along the metal patterns and form ohmic contacts with the metal patterns, and a light reflecting structure formed to cover the electrode structure, thereby improving an ohmic contact characteristic and light extraction efficiency.
机译:p型半导体层结构包括:p型半导体层;电极结构,其包括形成在p型半导体层上并且彼此交叉的金属图案;以及欧姆接触图案,其插入在金属图案和p-半导体层之间。沿着金属图案形成的半导体型半导体层与金属图案形成欧姆接触,并形成覆盖电极结构的光反射结构,从而提高了欧姆接触特性和光提取效率。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号