According to the present invention, disclosed are a vertical ultraviolet (UV) light emitting device and an AlN template for a vertical UV light emitting device. According to the present invention, provided is the vertical UV light emitting device which comprises: a sapphire substrate; a monocrystalline layer including GaN formed on the sapphire substrate; a monocrystalline AlN layer formed on the monocrystalline including the GaN; and a UV light emitting diode (UV LED) epi layer grown on the monocrystalline AlN layer. The monocrystalline layer including the GaN and the monocrystalline AlN layer are formed through a nonconsecutive process in the same reactive chamber.;COPYRIGHT KIPO 2018
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