AlN VERTICAL TYPE ULTRA-VIOLET LIGHT EMITTING DEVICE METHOD FOR MANUFACTURING OF THE SAME AlN TEMPLETE FOR VERTICAL TYPE ULTRA-VIOLET LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING OF THE SAME

摘要

In the present invention, disclosed are a vertical type ultraviolet light emitting device, a manufacturing method thereof, an AlN template for the vertical type ultraviolet light emitting device, and a manufacturing method thereof. According to the present invention, as a method for manufacturing a vertical ultraviolet light emitting device using a reaction chamber, provided is the method for manufacturing a vertical ultraviolet light emitting device which includes the steps of: (a) forming a single crystal layer including GaN on a sapphire substrate; (b) forming a single crystal AlN layer on the single crystal layer including GaN; and (c) growing a UV LED epitaxial layer on the single crystal AlN layer. The step (a) and the step (b) are performed through a discontinuous process. Accordingly, the present invention can improve yield by improving a bending property.