An integrated method for a FINFET having a plurality of fin heights that are tightly controlled.

摘要

Forming a pin of the non-planar device on the substrate, the pin including a second layer between the first and third layers; Replacing the second layer with a dielectric material; And forming a gate stack on the channel region of the fin. A first multi-gate device on the source and drain containing substrate formed on the fin, and a gate stack disposed on the conductive layer in the channel region of the fin, on the dielectric layer; And a gate stack disposed on the first conductive layer and the second conductive layer in the channel region of the fin, the first conductive layer and the second conductive layer separated by the dielectric layer, and the source and drain containing substrate An apparatus comprising a second multi-gate device is disclosed.