The present invention relates to a terahertz laser (1) with a first radiation frequency of 700 to 1200 GHz suitable for emitting at least one first electromagnetic radiation. The laser comprises a resonant cavity 20 arranged to be optically pumped by an infrared laser source 10 and an infrared laser source 10 which contains an ammonia gas as an amplifying medium, Cavity 20 is the resonant cavity at the first emission frequency. Wherein the infrared laser source 10 is a continuous semiconductor laser source capable of exciting molecules of the amplification medium from an initial energy level to at least one first excitation energy level, Is mitigated through a pure inversion transition corresponding to the first emission frequency. The invention also relates to a terahertz laser according to the invention and to a terahertz source comprising the use of a terahertz laser according to the invention.;
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