首页> 外国专利> SYNAPSE DEVICE FOR APPLICATION ON NEUROMORPHIC SYSTEM METHOD OF FABRICATING THE SAME AND SYNAPSE CIRCUIT COMPONENT INCLUDING THE SAME

SYNAPSE DEVICE FOR APPLICATION ON NEUROMORPHIC SYSTEM METHOD OF FABRICATING THE SAME AND SYNAPSE CIRCUIT COMPONENT INCLUDING THE SAME

机译:用于神经系统系统的突触设备制造方法以及包括该突触电路组件的突触电路组件

摘要

A synapse device for application on a neuromorphic system is provided. The synapse device for application on a neuromorphic system includes a first electrode, a surface oxide layer, a resistance-variable layer, and a second electrode. The surface oxide layer is disposed on the first electrode. The resistance-variable layer is disposed on the surface oxide layer. The second electrode is disposed on the resistance-variable layer. The synapse device for application on a neuromorphic system is configured to change on/off states by forming and removing a conductive filament in the double layer of the surface oxide layer and the resistance-variable layer. An analog characteristic is implemented by the stack configuration of the synapse device.
机译:提供了一种用于神经形态系统的突触装置。用于神经形态系统的突触装置包括第一电极,表面氧化物层,电阻可变层和第二电极。表面氧化物层设置在第一电极上。电阻可变层设置在表面氧化物层上。第二电极设置在可变电阻层上。用于神经形态系统的突触装置被配置为通过在表面氧化物层和电阻可变层的双层中形成和去除导电丝而改变开/关状态。模拟特性由突触设备的堆栈配置实现。

著录项

  • 公开/公告号KR20180057384A

    专利类型

  • 公开/公告日2018-05-30

    原文格式PDF

  • 申请/专利权人 POSTECH ACADEMY-INDUSTRY FOUNDATION;

    申请/专利号KR20160155948

  • 发明设计人 WOO JI YONG;HWANG HYUN SANG;

    申请日2016-11-22

  • 分类号G06N3/063;G06N3/04;

  • 国家 KR

  • 入库时间 2022-08-21 12:40:00

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