Atom-based Switching Device having Steep-slope resistance Change and Atom-based Field-effect-transistor having the same

摘要

The present invention provides an atom-based switching device having steep-slope resistance change and an atom-based field effect transistor including the same. The atom-based switching element according to the present invention can realize the switching element having a low subthreshold slope while maintaining low off current, a high on/off resistance ratio and low driving voltage by inserting a copper (Cu) or silver (Ag) doped chalcogenide insulating layer between an upper electrode and a lower electrode. Therefore, the atom-based field effect transistor having the low off current, operation voltage and a steep-slope subthreshold slope can be realized by providing the atom-based field effect transistor including the atom-based switching element. The atom-based switching element comprises: a first electrode; the insulating layer which is formed on the first electrode, and on which a conductive filament is generated and is disappeared; and a second electrode formed on the insulating layer.