首页> 外国专利> TEMPLATE FOR IMPRINT LITHOGRAPHY INCLUDING A RECESSION AN APPARATUS OF USING THE TEMPLATE AND A METHOD OF FABRICATING AN ARTICLE

TEMPLATE FOR IMPRINT LITHOGRAPHY INCLUDING A RECESSION AN APPARATUS OF USING THE TEMPLATE AND A METHOD OF FABRICATING AN ARTICLE

机译:用于样板印刷术的模板,包括一个使用该模板的装置和一种制作物件的方法

摘要

A template for imprint lithography of the present invention may comprise a main body. The main body may include a base surface and a recessed part extended from the base surface placed along a base plane, and the recessed part includes a main portion having a tapered sidewall. In exemplary embodiments, the recessed part includes an intermediate portion having an intermediate sidewall. The intermediate sidewall is round, or at least a portion of the intermediate sidewall is placed at an angle different from an average tapering angle of the main portion. In another aspect, a method of manufacturing a semiconductor device of the present invention comprises the steps of: forming a patterned resist layer having the tapered sidewall on a substrate with a device layer; patterning the device layer by using the patterned resist layer; and etching at least a portion of the device layer to expose a lateral direction part of the at least the portion of the device layer. The template is very suitable for forming a three-dimensional memory array.
机译:本发明的用于压印光刻的模板可以包括主体。主体可以包括底表面和从底表面延伸并沿着底平面布置的凹部,并且该凹部包括具有锥形侧壁的主体部。在示例性实施例中,凹入部分包括具有中间侧壁的中间部分。中间侧壁是圆形的,或者中间侧壁的至少一部分以不同于主要部分的平均锥角的角度放置。另一方面,本发明的半导体器件的制造方法包括以下步骤:在具有器件层的基板上形成具有锥形侧壁的图案化抗蚀剂层;通过使用图案化的抗蚀剂层来图案化器件层;蚀刻器件层的至少一部分,以暴露器件层的至少一部分的横向部分。该模板非常适合于形成三维存储阵列。

著录项

  • 公开/公告号KR20180072554A

    专利类型

  • 公开/公告日2018-06-29

    原文格式PDF

  • 申请/专利权人 CANON KABUSHIKI KAISHA;

    申请/专利号KR20170170980

  • 发明设计人 CHOI BYUNG JIN;

    申请日2017-12-13

  • 分类号G03F1/64;G03F7;H01L21/027;

  • 国家 KR

  • 入库时间 2022-08-21 12:39:42

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