3D POSS HIGHLY TRANSPARENT POSS-BASED PHOTORESIST FOR ULTRATHICK 3D NANOSTRUCTURES

摘要

The present invention relates to a polyhedral oligomers silsesquioxane (POSS)-based highly transparent photoresist, and ultra-thick film 3D nanostructures using the same. The photoresist includes a copolymer having (a) an acrylic unit containing an epoxy group, and (b) an acrylic unit containing a POSS group as a repeating unit. The photoresist of the present invention is a new epoxy-functional photoresist material having a POSS group, which has improved transparency, photoactivity and mechanical strength as compared with the prior art, and thus can be processed into an ultra-thick film nanostructure having a thickness of 100μm or more through interference lithography or the like.