3D POSS HIGHLY TRANSPARENT POSS-BASED PHOTORESIST FOR ULTRATHICK 3D NANOSTRUCTURES

摘要

The present invention relates to a high transparency photoresist based on polyhedral oligomeric silsesquioxane (POSS) and a super thick film 3D nanostructure using the same, wherein the photoresist comprises (a) an acrylic unit containing an epoxy group, and (b) And a copolymer having an acrylic unit containing a POSS group as a repeating unit.