Method for fabricating metal contact using DPTDouble Patterning Technology

摘要

The idea of the present invention is to provide a metal contact forming method capable of minimizing the string overhead as the semiconductor device chip size is reduced. The method of forming a metal contact includes sequentially forming a first insulating layer and a first mask layer on a target layer on which a cell region and a ferry region are defined; A first opening that exposes the first insulating layer and has a line shape extending in a first direction in the cell region, and a second opening that exposes the first insulating layer in the ferri-Forming a first mask pattern having a first mask pattern; A first sacrificial layer of a line shape extending in a second direction perpendicular to the first direction on the first mask pattern and the exposed first insulating layer of the cell region using a DPT (Double Patterning Technology) Forming a pattern; Forming a contact hole exposing the target layer by etching the first insulating layer using the first mask pattern and the first sacrificial layer pattern as a mask; And filling the contact hole with a metal material to form a metal contact.;